NXP Semiconductors BSN20
The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.| Part No. | BSN20 |
|---|---|
| Datasheet | BSN20 Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel Transistor |
| Buy | Stock & Price |
FEATURES
● Direct interface to C-MOS, TTL, etc.● High-speed switching
● No secondary breakdown.
APPLICATIONS
● Thin and thick film circuits● General purpose fast switching applications.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor in a SOT23 SMD package. 1 2 MAM273 BSN20 PINNING - SOT23 PIN 1 2 3 SYMBOL g s dDESCRIPTION
gate source drain handbook, halfpage 3 d g s CAUTION The device is supplied in an antistatic package. Top view Marking code: M8p. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS ID RDSon VGSth PARAMETER drain-source voltage (DC) drain current (DC) drain-source on-state resistance gate-source threshold voltage ID = 100 mA; VGS = 10 V ID = 1 mA; VGS = VDS CONDITIONS MAX. 50 100 15 1.8 V mA Ω V UNIT 1997 Jun 18 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO ID IDM Ptot Tstg Tj PARAME...
