BSN20 - N-channel Transistor

NXP Semiconductors

General Description

N-channel enhancement mode vertical D-MOS transistor in a SOT23 SMD package.

CAUTION The device is supplied in an antistatic package.

Key Features

Direct interface to C-MOS, TTL, etc.
High-speed switching.
No secondary breakdown.

📥 Download Datasheet

BSN20 n-channel transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	BSN20
Manufacturer	NXP Semiconductors
File Size	138.90 KB
Description	N-channel Transistor
Datasheet	BSN20 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BSN20	N-Channel MOSFET	Diodes
BSN20	N-Channel 60V MOSFET	VBsemi
BSN20	N-Channel MOSFET	Kexin
BSN20BK	N-channel Trench MOSFET	nexperia
BSN011NE2LS	Power-MOSFET	Infineon

Other Datasheets by NXP Semiconductors

Part Number	Description
BSN205	N-channel Transistor
BSN205A	N-channel Transistor
BSN20W	N-channel Transistor
BSN254	N-channel Transistor
BSN254A	N-channel Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DISCRETE SEMICONDUCTORS DATA SHEET BSN20 N-channel enhancement mode vertical D-MOS transistor Product speciﬁcation Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product speciﬁcation N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Thin and thick film circuits • General purpose fast switching applications. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 SMD package. 1 2 MAM273 BSN20 PINNING - SOT23 PIN 1 2 3 SYMBOL g s d DESCRIPTION gate source drain handbook, halfpage 3 d g s CAUTION The device is supplied in an antistatic package.