BSN20BK - N-channel Trench MOSFET

Datasheet Summary

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Logic-level compatible.
Very fast switching.
Trench MOSFET technology.
ElectroStatic Discharge (ESD) protection: 2 kV HBM 3.

nexperia

📥 Download Datasheet

Datasheet Details

Part number	BSN20BK
Manufacturer	nexperia
File Size	726.17 KB
Description	N-channel Trench MOSFET
Datasheet	BSN20BK Datasheet
Additional preview pages of the BSN20BK datasheet.

📁 Similar Datasheet

BSN20 - N-channel Transistor (NXP)
BSN20 - N-Channel MOSFET (Diodes)
BSN20 - N-Channel 60V MOSFET (VBsemi)
BSN205 - N-channel Transistor (NXP)
BSN205A - N-channel Transistor (NXP)
BSN20W - N-channel Transistor (NXP)
BSN254 - N-channel Transistor (NXP)
BSN254A - N-channel Transistor (NXP)
BSN274 - N-channel Transistor (NXP)
BSN274A - N-channel Transistor (NXP)

Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text

BSN20BK 60 V, N-channel Trench MOSFET 18 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection: 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.

Published: Sep 7, 2018 |