Datasheet Summary
60 V, N-channel Trench MOSFET
18 December 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection: 2 kV HBM
3. Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - 60 V
VGS gate-source voltage
-20
-...
