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DMG4N65CT - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This new generation complementary MOSFET

Key Features

  • low onresistance and fast switching, making it ideal for high efficiency power management.

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ADVANCE INFORMATIO DMG4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 650V RDS(ON) 3.0Ω@VGS = 10V Package TO220-3 ID TC = 25°C 4.0 A Description This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. Applications • Motor control • Backlighting • DC-DC Converters • Power management functions Features • Low Input Capacitance • High BVDss rating for power application • Low Input/Output Leakage • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: TO220-3 • Case Material: Molded Plastic, “Green” Molding Compound.