DMN2065UW Datasheet | Diodes Incorporated

NEW PRODUCT Product Summary V(BR)DSS 20V RDS(ON) max 56mΩ @ VGS = 4.5V 65mΩ @ VGS = 2.5V 93mΩ @ VGS = 1.8V 140mΩ @ VGS = 1.5V ID max TA = 25°C 2.8A 2.6A 2.2A 1.8A 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Lead Free By Design/RoHS pliant (Note 1) - "Green" Device (Note 2) - Qualified to AEC-Q101 standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. - General Purpose Interfacing Switch - Power...