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Product Summary
V(BR)DSS 20V
RDS(ON) max
56mΩ @ VGS = 4.5V 65mΩ @ VGS = 2.5V 93mΩ @ VGS = 1.8V 140mΩ @ VGS = 1.5V
ID max TA = 25°C
2.8A 2.6A 2.2A 1.8A
DMN2065UW
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DMN2065UW Datasheet
