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NEW PRODUCT
DMN30H4D0LFDE
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 300V
RDS(ON)
4Ω @ VGS = 10V 4Ω @ VGS = 4.5V 6Ω @ VGS = 2.7V
ID TA = +25°C
0.55A
0.55A
0.44A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
• Power management functions • Battery Operated Systems and Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
U-DFN2020-6
Features
• 0.