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DMN3900UFA Datasheet N-Channel MOSFET

Manufacturer: Diodes Incorporated

Overview: Product Summary V(BR)DSS 30V RDS(on) 760m @ VGS = 4.5V 930m @ VGS = 2.5V 1500mΩ @ VGS = 1.8V ID TA = +25°C 0.65A 0.58A 0.

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications  Load switch  Portable applications  Power Management Functions DMN3900UFA 30V N-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

  • 0.4mm ultra low profile package for thin.