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DMT6009LFG - N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Key Features

  • Low RDS(ON).
  • Ensures On-State Losses Are Minimized.
  • Excellent Qgd x RDS(ON) Product (FOM).
  • Advanced Technology for DC-DC Converters.
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products.
  • 100% UIS (Avalanche) Rated.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVNAENWCEP IRNNOEFDWOURPCRTMOADTIUOCNT Product Summary V(BR)DSS 60V RDS(ON) Max 10mΩ @ VGS = 10V 11.7mΩ @ VGS = 4.5V ID Max TC = +25°C 34A 31.5A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. DMT6009LFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits  Low RDS(ON) – Ensures On-State Losses Are Minimized  Excellent Qgd x RDS(ON) Product (FOM)  Advanced Technology for DC-DC Converters  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  100% UIS (Avalanche) Rated  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.