DMT6009LJ3 - 60V N-CHANNEL MOSFET

Diodes Incorporated

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Power management functions DC-DC converters Backlighting

Key Features

100% Unclamped Inductive Switching.
Ensures More Reliable and Robust End.

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DMT6009LJ3 60v n-channel mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMT6009LJ3
Manufacturer	Diodes Incorporated
File Size	754.71 KB
Description	60V N-CHANNEL MOSFET
Datasheet	DMT6009LJ3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NOT RECOMMENDED FOR NEW DESIGN CONTACT US DMT6009LJ3 Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 10mΩ @ VGS = 10V 12.8mΩ @ VGS = 4.5V ID TC = +25°C 74.5A 65.8A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.