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DMT6009LSS - N-Channel MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Power Management Functions DC-DC Converters Backlighting SO-8

Key Features

  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • High Conversion Efficiency.
  • Low RDS(ON).
  • Ensures On State Losses Are Minimized.
  • Excellent Qgd x RDS(ON) Product (FOM).
  • Advanced Technology for DC-DC Converters.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

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ADVANCE INNEFWORPRMOADTIUOCNT DMT6009LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) max 9.5mΩ @ VGS = 10V 12mΩ @ VGS = 4.5V ID max TA = +25°C 10.8A 9.6 Features and Benefits  100% Unclamped Inductive Switch (UIS) Test in Production  High Conversion Efficiency  Low RDS(ON) – Ensures On State Losses Are Minimized  Excellent Qgd x RDS(ON) Product (FOM)  Advanced Technology for DC-DC Converters  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.