FMMT494Q
FMMT494Q is 120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR manufactured by Diodes Incorporated.
Feature
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
Feature
- BVCEO > 120V
- IC = 1A Continuous Collector Current
- ICM = 2A Peak Pulse Current
- 500m W Power Dissipation
- h FE characterised up to 1A for high current gain hold up
- Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP capable (Note 4)
Mechanical Data
- Case: SOT23 (Type DN)
- Case Material: Molded Plastic, “Green” Molding pound.
UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish
- Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
- Weight: 0.008 grams (Approximate)
SOT23 (Type DN)
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Device Symbol
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