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ZVNL120G - 200V N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This new generation trench MOSFET

Features

  • High Voltage.
  • Low On-resistance.
  • Fast Switching Speed.
  • Low Gate Drive.
  • Low Threshold.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SOT223.
  • Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.
  • Terminals: Matte Tin F.

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Datasheet preview – ZVNL120G

Datasheet Details

Part number ZVNL120G
Manufacturer DIODES
File Size 523.60 KB
Description 200V N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet ZVNL120G Datasheet
Additional preview pages of the ZVNL120G datasheet.

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Full PDF Text Transcription

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Green ZVNL120G 200V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 200V RDS(ON) 10Ω @ VGS = 10V ID TA = +25°C 320mA Description This new generation trench MOSFET features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Applications  Off-line Power Supply Start-up Circuitry Features and Benefits  High Voltage  Low On-resistance  Fast Switching Speed  Low Gate Drive  Low Threshold  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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