ZVNL120A Datasheet | Zetex Semiconductors

FEATURES - 200 Volt VDS - RDS(on)=10Ω - Low threshold APPLICATIONS - Telephone handsets E-Line TO92 patible SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 200 180 2 ± 20 700 -55 to +150 UNIT V m A A V m W °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) mon Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. MAX. UNIT CONDITIONS. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf 200 85 20 7 8 8 20 12 500 10 10 200 0.5 1.5 100 10 100 V V n A µA µA m A Ω Ω m S p F p F p F ns ns ns ns V DD ≈ 25V, I D=250m A V DS=25 V, V GS=0V, f=1MHz I D=1m A, V GS=0V ID=1m A, V DS= V GS V GS= ± 20V, V DS=0V V DS=200 V, V GS=0 V DS=160 V, V GS=0V, T=125°C (2) V DS=25 V, V GS=5V V GS=5V,I D=250m A V GS=3V, I D=125m A V DS=25V,I D=250m A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3-401 TYPICAL CHARACTERISTICS 1.6 VGS= 10V 8V 6V 5V 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 30 35 40 45 3V 2V 50 4V VGS= 10V 8V 6V 4V 0.6 ID(On) Drain Current (Amps) ID(On)Drain Current (Amps) 1.4 1.2 0.4 3V 0.2 2V 0 0 2 4 6 8 10 - Drain Source Voltage (Volts) - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics ID(On) Drain Current (Amps) VDS= 40V 20V 500 gfs-Transconductance (m...