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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=10Ω * Low threshold APPLICATIONS * Telephone handsets
ZVNL120A
D G
S
E-Line TO92 Compatible SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 200 180 2 ± 20 700 -55 to +150 UNIT V mA A V mW °C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).