ZVNL120G Datasheet | Zetex Semiconductors

FEATURES - VDS - 200V - RDS(ON) - 10Ω 7 PARTMARKING DETAIL - ZVNL120 D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 200 320 2 ± 20 2 -55 to +150 UNIT V m A A V W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage SYMBOL MIN. BV DSS 200 0.5 1.5 100 10 100 500 10 10 200 85 20 7 8 8 20 12 MAX. UNIT CONDITIONS. V V n A µA µA m A Ω Ω m S p F p F p F ns ns ns ns V DD≈ 25V, I D=250m A V DS=25V, V GS=0V, f=1MHz I D=1m A, V GS=0V I D =1m A, V DS= V GS V GS= ± 20V, V DS=0V V DS=200V, V GS=0V V DS=160V, V GS=0V, T=125°C (2) V DS=25V, V GS=5V V GS=5V, I D=250m A V GS=3V, I D=125m A V DS=25V, I D=250m A Gate-Source Threshold Voltage V GS(th) Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) I GSS I DSS I D(on) R DS(on) Forward Transconductance(1)(2) g fs Input Capacitance (2) mon Source Output Capacitance (2) C iss C oss Reverse Transfer Capacitance (2) Crss Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) t d(on) tr t d(off) tf (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator - 420 TYPICAL CHARACTERISTICS 1.6 VGS= 10V 8V 6V 5V 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 30 35 40 45 3V 2V 50 4V VGS= 10V 8V 6V 4V 0.6 ID(On) Drain Current (Amps) ID(On)Drain Current (Amps) 1.4 1.2 0.4 3V 0.2 2V 0 0 2 4 6 8 10 - Drain Source Voltage (Volts) - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics ID(On) Drain Current (Amps) VDS= 40V 20V 500 gfs-Transconductance (m S) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3...