ZVNL120A- N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVNL110A- N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVNL110G- N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
ZVNL535A- N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN0124A- N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN0535A- N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN0540A- N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN0545A- N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Full PDF Text Transcription
Click to expand full text
SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
ISSUE 2 - JANUARY 1996 FEATURES * VDS - 200V * RDS(ON) - 10Ω 7
ZVNL120G
D
PARTMARKING DETAIL - ZVNL120 D G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 200 320 2 ± 20 2 -55 to +150 UNIT V mA A V W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage SYMBOL MIN. BV DSS 200 0.5 1.5 100 10 100 500 10 10 200 85 20 7 8 8 20 12 MAX. UNIT CONDITIONS.