Datasheet4U Logo Datasheet4U.com

ZXMS6005DT8 - 60V N-Channel MOSFET

Description

The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input.

It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality.

Features

  • Continuos Drain Source Voltage 60V.
  • On-State Resistance 200mΩ.
  • Nominal Load Current (VIN = 5V) 1.8A.
  • Clamping Energy 210mJ.

📥 Download Datasheet

Datasheet preview – ZXMS6005DT8

Datasheet Details

Part number ZXMS6005DT8
Manufacturer DIODES
File Size 309.88 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet ZXMS6005DT8 Datasheet
Additional preview pages of the ZXMS6005DT8 datasheet.
Other Datasheets by Diodes

Full PDF Text Transcription

Click to expand full text
ADVANCE INFORMATION   Green ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • On-State Resistance 200mΩ • Nominal Load Current (VIN = 5V) 1.8A • Clamping Energy 210mJ Description The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6005DT8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Applications • Compact Dual Package • Low Input Current • Logic Level Input (3.
Published: |