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ZXMS6005DG - 60V N-Channel MOSFET

Description

The ZXMS6005DG is a self protected low side MOSFET with logic level input.

It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality.

Features

  • Continuous drain source voltage 60V.
  • On-state resistance 200mΩ.
  • Nominal load current (VIN = 5V) 2.8A.
  • Clamping Energy 490mJ.

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Datasheet preview – ZXMS6005DG

Datasheet Details

Part number ZXMS6005DG
Manufacturer DIODES
File Size 306.10 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet ZXMS6005DG Datasheet
Additional preview pages of the ZXMS6005DG datasheet.

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Full PDF Text Transcription

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ADVANCE INFORMATION A Product Line of Diodes Incorporated ZXMS6005DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Features and Benefits  Continuous drain source voltage 60V  On-state resistance 200mΩ  Nominal load current (VIN = 5V) 2.8A  Clamping Energy 490mJ Description The ZXMS6005DG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6005DG is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.  Compact high power dissipation package  Low input current  Logic Level Input (3.
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