BS817 Description
BS817 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR.
BS817 Key Features
- High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automa
- Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections (see Diagram) Marking: S17
- Typ 230
- 2.8 30
- 58 8.0 1.5 5.0 15 Max
- 10 30 1.0 3.5 50 320 400
- VDS(0N), DRAIN-SOURCE ON-RESISTANCE (W)
- VDS = 0.1V TA = 25 C