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DIM600BSS12-E000 - Single Switch IGBT Module

Key Features

  • I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand KEY.

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Datasheet Details

Part number DIM600BSS12-E000
Manufacturer Dynex Semiconductor
File Size 209.95 KB
Description Single Switch IGBT Module
Datasheet download datasheet DIM600BSS12-E000 Datasheet

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www.DataSheet4U.com DIM600BSS12-E000 DIM600BSS12-E000 Single Switch IGBT Module Replaces issue September 2003, version PDS5651-2.0 PDS5702-1.2 January 2004 FEATURES I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 1.7V 600A 1200A APPLICATIONS I I I Motor Drives Wind Turbines UPS Systems 2(E) 5(E1) 3(G1) 1(C) 4(C1) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM600BSS12-E000 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.