DIM600NSM45-F0000 Datasheet | Dynex Semiconductor

FEATURES - - - - - 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction Isolated MMC Base with Al N Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) - (typ) IC (max) I C(PK) (max) 4500V 2.9 V 600A 1200A - (measured at the power busbars and not the auxiliary terminals) APPLICATIONS - - - - High Reliability Inverters Motor Controllers Traction Drives Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 6500V and currents up to 3600A. The DIM600NSM45-F000 is a single switch 4500V, soft punch through n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10us short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. Fig. 1 Single switch circuit diagram ORDERING INFORMATION Order As: DIM600NSM45-F000 Note: When ordering, please use the plete part number Outline type code: N (See package details for further information) Fig. 2 Electrical connections - (not to scale) 1/8 .. DIM600NSM45-F000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol QPD Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max.transistor...