DIM600DDM17-A000 Datasheet | Dynex Semiconductor

FEATURES - - - - 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Al Si C Baseplate with Al N Substrates KEY PARAMETERS VCES VCE (sat)- (typ) IC (max) IC(PK) (max) - 1700V 2.7V 600A 1200A High Thermal Cycling Capability (measured at the power busbars and not the auxiliary terminals) APPLICATIONS - - High Power Inverters Motor Controllers The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM600DDM17-A000 is a dual switch 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This module is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. Fig. 1 Dual switch circuit diagram ORDERING INFORMATION Order As: DIM600DDM17-A000 Outline type code: D Note: When ordering, please use the whole part number. (See package details for further information) Fig. 2 Electrical connections (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1 /9 .dynexsemi. .. SEMICONDUCTOR ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25° C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax It Visol QPD Parameter Collector-emitter voltage...