Datasheet Summary
Half Bridge IGBT Module
Replaces GP200MHB12S January 1999 version, DS4339-5.5 DS5296-1.5 November 2000
Features s s s
Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 2.7V 200A 400A
APPLICATIONS s s s s
High Power Inverters Motor Controllers Induction Heating Resonant Converters
11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1)
9(C1)
The Powerline range of high power modules includes half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP200MHS12 is a half bridge 1200V, n channel enhancement mode,...