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GP200MHS12 - Half Bridge IGBT Module

Key Features

  • s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY.

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Datasheet Details

Part number GP200MHS12
Manufacturer Dynex Semiconductor
File Size 99.55 KB
Description Half Bridge IGBT Module
Datasheet download datasheet GP200MHS12 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 DS5296-1.5 November 2000 FEATURES s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 200A 400A APPLICATIONS s s s s High Power Inverters Motor Controllers Induction Heating Resonant Converters 11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1) 9(C1) The Powerline range of high power modules includes half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP200MHS12 is a half bridge 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.