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GP201MHS18 - Low VCE(SAT) Half Bridge IGBT Module

Key Features

  • s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY.

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Datasheet Details

Part number GP201MHS18
Manufacturer Dynex Semiconductor
File Size 129.26 KB
Description Low VCE(SAT) Half Bridge IGBT Module
Datasheet download datasheet GP201MHS18 Datasheet

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GP201MHS18 GP201MHS18 Low VCE(SAT) Half Bridge IGBT Module DS5290-2.1 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 200A 400A APPLICATIONS s s s s 11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1) High Reliability Inverters Motor Controllers Traction Drives Resonant Converters 9(C1) The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP201MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.