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GP2400ESM12 - Powerline N-Channel Single Switch IGBT Module

Key Features

  • s s s s Fig. 1 Electrical connections - (not to scale) External connection C1 Aux C C2 C3 n - Channel Enhancement Mode Non Punch Through Silicon High Gate Input Impedance Optimised For High Power High Frequency Operation 1200V Rating 2400A Per Module s Isolated MMC Base with AlN s s G Aux E E1 E2 External connection E3.

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Datasheet Details

Part number GP2400ESM12
Manufacturer Dynex Semiconductor
File Size 169.18 KB
Description Powerline N-Channel Single Switch IGBT Module
Datasheet download datasheet GP2400ESM12 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GP2400ESM12 GP2400ESM12 Powerline N-Channel Single Switch IGBT Module Preliminary Information DS5360-1.1 May 2000 The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.