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GP2401ESM18 - Hi-Reliability Single Switch Low VCE(SAT) IGBT Module

Key Features

  • s s s s Low VCE(SAT) High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY.

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Datasheet Details

Part number GP2401ESM18
Manufacturer Dynex Semiconductor
File Size 152.98 KB
Description Hi-Reliability Single Switch Low VCE(SAT) IGBT Module
Datasheet download datasheet GP2401ESM18 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GP2401ESM18 GP2401ESM18 Hi-Reliability Single Switch Low VCE(SAT) IGBT Module Replaces February 2000 version, DS5345-1.0 DS5345-2.4 January 2001 FEATURES s s s s Low VCE(SAT) High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 2400A 4800A APPLICATIONS External connection s s s s High Reliability Inverters Motor Controllers Traction Drives Low-Loss System Retrofits G Aux C C1 C2 C3 The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP2401ESM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.