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GP250MHB06S - Half Bridge IGBT Module

Key Features

  • s s s s KEY.

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Datasheet Details

Part number GP250MHB06S
Manufacturer Dynex Semiconductor
File Size 127.82 KB
Description Half Bridge IGBT Module
Datasheet download datasheet GP250MHB06S Datasheet

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Full PDF Text Transcription (Reference)

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GP250MHB06S GP250MHB06S Half Bridge IGBT Module Replaces January 2000 version, DS4325 - 5.0 DS4325-6.0 October 2001 FEATURES s s s s KEY PARAMETERS VCES VCE(sat) IC25 IC75 IC(PK) (typ) 600V 2.2V (max) 350A (max) 250A (max) 700A n - Channel High Switching Speed Low Forward Voltage Drop Isolated Base APPLICATIONS s s PWM Motor Control UPS 11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1) The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP250MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion.