GP800DCS18 - Chopper Switch IGBT Module

Dynex Semiconductor

Key Features

s s s s s Non Punch Through Silicon Isolated Copper Baseplate With Al2O3 Substrate Low Inductance Internal Construction Full 1800V Rating 800A Per Module KEY.

GP800DCS18 chopper switch igbt module by Dynex Semiconductor - Datasheet Preview

Datasheet Details

Part number	GP800DCS18
Manufacturer	Dynex Semiconductor
File Size	193.29 KB
Description	Chopper Switch IGBT Module
Datasheet	GP800DCS18 Datasheet

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GP800DCS18 GP800DCS18 Chopper Switch IGBT Module Replaces November 2000 version, DS5221-4.0 DS5221-5.0 January 2001 FEATURES s s s s s Non Punch Through Silicon Isolated Copper Baseplate With Al2O3 Substrate Low Inductance Internal Construction Full 1800V Rating 800A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 800A 1600A APPLICATIONS s s s s s High Power Inverters Motor Controllers Induction Heating Resonant Converters Choppers 2(C2) 4(E2) 1(E1) 3(C1) 5(E1) 6(G1) 7(C1) The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP800DCS18 is a chopper switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.