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GP800DDS12 - Powerline N-Channel Dual Switch IGBT Module

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Features

  • s s s s s s s (See package details for further information) Fig. 1 Electrical connections - (not to scale) 12(C2) 2(C2) 4(E2) 1(E1) 7(C ) 1 n - Channel Enhancement Mode High Input Impedance Optimised For High Power High Frequency Operation Isolated Base Full 1200V Capability 800A Per Arm 11(G2) 10(E2) 3(C1) 5(E1) 6(G1) Fig.2 Dual switch circuit diagram.

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Datasheet Details

Part number GP800DDS12
Manufacturer Dynex Semiconductor
File Size 105.16 KB
Description Powerline N-Channel Dual Switch IGBT Module
Datasheet download datasheet GP800DDS12 Datasheet
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GP800DDS12 GP800DDS12 Powerline N-Channel Dual Switch IGBT Module Replaces October 1999 version, DS5172-3.0 DS5172-4.0 January 2000 The GP800DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.
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