GP800DDS12
GP800DDS12 is Powerline N-Channel Dual Switch IGBT Module manufactured by Dynex Semiconductor.
FEATURES s s s s s s s
(See package details for further information) Fig. 1 Electrical connections
- (not to scale)
12(C2) 2(C2) 4(E2) 1(E1) 7(C )
1 n
- Channel Enhancement Mode High Input Impedance Optimised For High Power High Frequency Operation Isolated Base Full 1200V Capability 800A Per Arm
11(G2) 10(E2) 3(C1) 5(E1) 6(G1)
Fig.2 Dual switch circuit diagram
APPLICATIONS s s s s
ORDERING INFORMATION
Order As: GP800DDS12 Note: When ordering, please use the whole part number.
High Power Switching Motor Control Inverters Traction Systems
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/11
ABSOLUTE MAXIMUM RATINGS
- PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package. Appropriate safety precautions should always be followed.
Tcase = 25˚C unless stated otherwise. Symbol VCES VGES IC Parameter Collector-emitter voltage Gate-emitter voltage Collector current DC, Tcase = 25˚C DC, Tcase = 75˚C IC(PK) Pmax Visol Maximum power dissipation Isolation voltage 1ms, Tcase = 75˚C Tcase = 25˚C (Transistor) moned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1200 ±20 1050 800 1600 6000 2500 Units V V A A A W V
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Rth(j-c) Rth(c-h) Tj Parameter Thermal resistance
- transistor (per arm) Thermal resistance
- diode (per arm) Thermal resistance
- Case to...
