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GP800DDS18 - Dual Switch IGBT Module

Datasheet Summary

Features

  • s s s s s Non Punch Through Silicon Isolated Copper Baseplate With Al2O3 Substrate Low Inductance Internal Construction Full 1800V Rating 800A Per Arm KEY.

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Datasheet preview – GP800DDS18

Datasheet Details

Part number GP800DDS18
Manufacturer Dynex Semiconductor
File Size 135.20 KB
Description Dual Switch IGBT Module
Datasheet download datasheet GP800DDS18 Datasheet
Additional preview pages of the GP800DDS18 datasheet.

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Full PDF Text Transcription

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GP800DDS18 GP800DDS18 Dual Switch IGBT Module Replaces October 2000 version, DS5165-4.2 DS5165-5.0 January 2001 FEATURES s s s s s Non Punch Through Silicon Isolated Copper Baseplate With Al2O3 Substrate Low Inductance Internal Construction Full 1800V Rating 800A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 800A 1600A APPLICATIONS s s s s 12(C2) 2(C2) 4(E2) 1(E1) 7(C1) 11(G2) 10(E2) 3(C1) 5(E1) 6(G1) High Power Inverters Motor Controllers Induction Heating Resonant Converters The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP800DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
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