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GP800NSM33 - Hi-Reliability Single Switch IGBT Module Preliminary Information

Features

  • s s s s s High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates 3300V Rating 800A Per Module KEY.

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Datasheet Details

Part number GP800NSM33
Manufacturer Dynex Semiconductor
File Size 93.47 KB
Description Hi-Reliability Single Switch IGBT Module Preliminary Information
Datasheet download datasheet GP800NSM33 Datasheet

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GP800NSM33 GP800NSM33 Hi-Reliability Single Switch IGBT Module Preliminary Information DS5372-2.0 February 2001 FEATURES s s s s s High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates 3300V Rating 800A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 3300V 3.4V 800A 1600A External connection APPLICATIONS s s s s C1 Aux C C2 High Reliability Inverters Motor Controllers Traction Drives Resonant Converters G Aux E E1 E2 External connection The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP800NSM33 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
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