GP800NSS33 Datasheet | Dynex Semiconductor

FEATURES s s s Non Punch Through Silicon Isolated Copper Baseplate with AL2O3 Substrate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 3300V 3.6V 800A 1600A APPLICATIONS s s s s High Power Inverters Motor Controllers Induction Heating Resonant Converters Aux C External connection C1 C2 The Powerline range of high power modules includes dual, half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP800NSS33 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. G Aux E E1 E2 External connection Fig. 1 Single switch circuit diagram C1 ORDERING INFORMATION Order As: GP800NSS33 Note: When ordering, please use the whole part number. E2 G E1 C1 E2 C2 E2 - Aux Emitter C1 - Aux Collector Outline type code: N (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/9 .dynexsemi. ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation...