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GP800NSS33 - Single Switch IGBT Module Preliminary Information

Features

  • s s s Non Punch Through Silicon Isolated Copper Baseplate with AL2O3 Substrate Low Inductance Internal Construction KEY.

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Datasheet Details

Part number GP800NSS33
Manufacturer Dynex Semiconductor
File Size 93.24 KB
Description Single Switch IGBT Module Preliminary Information
Datasheet download datasheet GP800NSS33 Datasheet

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GP800NSS33 GP800NSS33 Single Switch IGBT Module Preliminary Information Replaces February 2000 version, DS5358-2.0 DS5358-2.1 March 2001 FEATURES s s s Non Punch Through Silicon Isolated Copper Baseplate with AL2O3 Substrate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 3300V 3.6V 800A 1600A APPLICATIONS s s s s High Power Inverters Motor Controllers Induction Heating Resonant Converters Aux C External connection C1 C2 The Powerline range of high power modules includes dual, half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP800NSS33 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
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