E-CMOS ENP2300
The ENP2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.| Part No. | ENP2300 |
|---|---|
| Datasheet | ENP2300 Download |
| Manufacturer |  E-CMOS |
| Description | 20V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● VDS =20V，ID =5A RDS(ON)(Typ.) =22mΩ @ VGS =4.5V RDS(ON)(Typ. )=26mΩ @VGS =2.5V● High power and current handing capability
● Lead free product is acquired
● Surface mount package Application
● PWM applications
● Load switch Package
● SOT-23 Schematic diagram Marking and pin assignment E-CMOS Corp. ( Page 1 of 12 1L223-Rev.F001 20V N-Channel Enhancement Mode MOSFET ENP2300 Ordering Information ENP2300 XX R B1= SOT-23
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Notes: a. surface mounted on FR4 board, t≤10sec b. pulse test: pulse width≤300μs, duty≤2% c. guaranteed by design, not subject to production testing E-CMOS Corp. ( Page 2 of 12 1L223-Rev.F001 20V N-Channel Enhancement Mode MOSFET ENP2300 Thermal Characteristics Typical Performance Characteristics E-CMOS Corp. ( Page 3 of 12 1L223-Rev.F001 20V N-Channel Enhancement Mode MOSFET ENP2300 E-CMOS Corp. ( Page 4 of 12 1L223-Rev.F001 20V...
