E-CMOS ENP2301
The ENP2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.| Part No. | ENP2301 |
|---|---|
| Datasheet | ENP2301 Download |
| Manufacturer |  E-CMOS |
| Description | 20V P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● VDS =-20V，ID =-2.8A RDS(ON)(Typ.) = 79mΩ @VGS =-2.5V RDS(ON)(Typ.) = 64mΩ @VGS =-4.5V● High power and current handing capability
● Lead free product is acquired
● Surface mount package Application
● PWM applications
● Load switch Package
● SOT-23 Schematic diagram E-CMOS Corp. ( Page 1 of 7 2D25N-Rev.F001 20V P-Channel Enhancement Mode MOSFET ENP2301 Marking and pin assignment Ordering Information ENP2301 XX R B1=SOT-23
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) E-CMOS Corp. ( Page 2 of 7 2D25N-Rev.F001 20V P-Channel Enhancement Mode MOSFET ENP2301ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Notes: a. surface mounted on FR4 board, t≤10sec b. pulse test: pulse width≤300μs, duty≤2% c. guaranteed by design, not subject to production testing Thermal Characteristics E-CMOS Corp. ( Page 3 of 7 2D25N-Rev.F001 20V P-Channel Enhancement Mode MOSFET ENP2301 Typical Performance Characteristics E-CMOS Corp. ( Page 4 of 7 2D25N-Rev.F001 2...
