E-CMOS ENP2305
The ENP2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.| Part No. | ENP2305 |
|---|---|
| Datasheet | ENP2305 Download |
| Manufacturer |  E-CMOS |
| Description | 20V P Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● VDS =-20V，ID =-4.2A RDS(ON)(Typ.) =43mΩ @VGS=-2.5V RDS(ON)(Typ.) =31mΩ @VGS=-4.5V● High power and current handing capability
● Lead free product is acquired
● Surface mount package Application
● PWM applications
● Load switch Package
● SOT-23-3L Schematic diagram Marking and pin assignment Ordering Information ENP2305 XX GR B1= SOT-23-3L E-CMOS Corp. ( Page 1 of 6 2D14N-Rev.F001 20V P Channel Enhancement Mode MOSFET ENP2305
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Notes: a. surface mounted on FR4 board, t≤10sec b. pulse test: pulse width≤300μs, duty≤2% c. guaranteed by design, not subject to production testing Thermal Characteristics E-CMOS Corp. ( Page 2 of 6 2D14N-Rev.F001 20V P Channel Enhancement Mode MOSFET ENP2305 Typical Performance Characteristics E-CMOS Corp. ( Page 3 of 6 2D14N-Rev.F001 20V P Channel Enhancement Mode MOSFET ENP2305 E-CMOS Corp. ( Page 4 of 6 2D14N-Rev.F0...
