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XTR25020 Datasheet High Temperature Power Gate Driver

Manufacturer: EASii

Overview: XTR25020 High Temperature Power Gate Driver Data Sheet Rev 2 – August 2021 (DS-00662-14) PRODUCTION XTRPPPPP YYWWANN LJCC28.

Datasheet Details

Part number XTR25020
Manufacturer EASii
File Size 675.86 KB
Description High Temperature Power Gate Driver
Datasheet XTR25020-EASii.pdf

General Description

XTR25020 is a high-temperature, high reliability intelligent power transistor driver designed to provide a robust, reliable, pact and efficient solution for driving a large variety of high-temperature, highvoltage, and high-efficiency power transistors.

XTR25020 is able to drive normally-On and normally-Off power transistors in Silicon Carbide (SiC), Gallium Nitride (GaN) and standard silicon, including JFETs, MOSFETs, BJTs, SJTs and MESFETs.

The XTR25020 includes one pull-up gate-drive-channel (PU_DR) capable of sourcing a typical 3A peak current and two pull-down gatedrive-channels capable of sinking a typical 3A peak current (PD_DR and PD_MC).

Key Features

  • Operational beyond the -60°C to +230°C temperature range.
  • Supply voltage from 4.5V to 35V.
  • Integrated charge-pump inside pull-up driver allowing 100% duty- cycle PWM control signal.
  • Internal 5V LDO regulator.
  • Safe start-up of normally-on devices.
  • Half bridge cross-conduction protection.
  • Pull-up driver with 3A peak current and 1A continuous current capability.
  • Pull-down driver with 3A peak current capability.

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XTR25020 Distributor