Part XTR26020
Description High Temperature Isolated Intelligent Gate Driver
Manufacturer EASii
Size 902.35 KB
EASii

XTR26020 Overview

Description

XTR26020 is a high-temperature, high reliability isolated power transistor driver designed to provide a robust, reliable, compact and efficient solution for driving a large variety of high-temperature, highvoltage, and high-efficiency power transistors. XTR26020 is able to drive normally-On and normally-Off power transistors in Silicon Carbide (SiC), Gallium Nitride (GaN) and standard silicon, including JFETs, MOSFETs, BJTs, SJTs and MESFETs.

Key Features

  • Operational beyond the -60°C to +230°C temperature range
  • Supply voltage from 4.5V to 35V
  • Integrated charge-pump inside pull-up driver allowing 100% duty- cycle PWM control signal
  • Internal 5V LDO regulator
  • Safe start-up of normally-on devices
  • Isolated data transmission through multi-channel transceiver
  • Half bridge cross-conduction protection
  • Pull-up driver with 4A peak current and 1A continuous current capability at Tc=230°C
  • Pull-down driver with 2.4A peak current capability at Tc=230°C
  • On-chip active Miller clamp switch