Datasheet4U Logo Datasheet4U.com

XTR2N0400 - 40V N-Channel Power MOSFET

General Description

XTR2N0400 is a family of N-channel power MOSFETs designed to reliably operate over a wide range of temperatures.

Full functionality is guaranteed from -60°C to +230°C, though operation well below and above this temperature range is achieved.

Key Features

  • Minimum BVDSS = 55V.
  • Allowed VGS range.
  • 5.5V to +5.5V.
  • Operational beyond the -60°C to +230°C temperature range.
  • Low RDS(on) o XTR2N0425: 560 mΩ @ 230°C o XTR2N0450: 255 mΩ @ 230°C.
  • Maximum ID: o XTR2N0425: 4.7A @ 230°C o XTR2N0450: 10.3A @ 230°C.
  • On-time (td(on)+tr): o XTR2N0425: 25nsec @ 230°C o XTR2N0450: 30nsec @ 230°C.
  • Off-time (td(off)+tf): o XTR2N0425: 56nsec @ 230°C o XTR2N0450: 68nsec @ 230°C.
  • Ruggedized.

📥 Download Datasheet

Datasheet Details

Part number XTR2N0400
Manufacturer EASii
File Size 684.77 KB
Description 40V N-Channel Power MOSFET
Datasheet download datasheet XTR2N0400 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
XTR101 Precision/ Low Drift 4-20mA TWO-WIRE TRANSMITTER Burr-Brown Corporation
XTR103 4-20mA Current Transmitter Burr-Brown Corporation
XTR104 4-20mA Current Transmitter Burr-Brown Corporation
XTR105 4-20mA CURRENT TRANSMITTER Burr-Brown Corporation
XTR106 4-20mA CURRENT TRANSMITTER Burr-Brown Corporation

Other Datasheets by EASii

Part Number Description
XTR2N0300 High Temperature 30V P-Channel Power MOSFET
XTR2N0307 High Temperature 30V P-Channel Small Signal MOSFET
XTR2N0500 High Temperature 35V P-Channel Power MOSFET
XTR2N0800 80V N-Channel Power MOSFET
XTR2N0807 High Temperature 80V N-Channel Small Signal MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
XTR2N0400 High Temperature, 40V N-Channel Power MOSFET Data Sheet Rev 3 – August 2021 (DS-00101-11) PRODUCTION XTRPPPPP YYWWANN CDIP8 XTR2N0425 XTRPPPPP YYWWANN TO257-3 XTR2N0425 FEATURES • Minimum BVDSS = 55V. • Allowed VGS range –5.5V to +5.5V. • Operational beyond the -60°C to +230°C temperature range. • Low RDS(on) o XTR2N0425: 560 mΩ @ 230°C o XTR2N0450: 255 mΩ @ 230°C • Maximum ID: o XTR2N0425: 4.7A @ 230°C o XTR2N0450: 10.3A @ 230°C • On-time (td(on)+tr): o XTR2N0425: 25nsec @ 230°C o XTR2N0450: 30nsec @ 230°C • Off-time (td(off)+tf): o XTR2N0425: 56nsec @ 230°C o XTR2N0450: 68nsec @ 230°C • Ruggedized 3-lead TO257, 8-lead side brazed DIP and 8-lead SOIC with ePAD. • Also available as bare die. APPLICATIONS • Reliability-critical, Automotive, Aeronautics & Aerospace, Downhole.