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XTR2N0500 Datasheet High Temperature 35v P-channel Power MOSFET

Manufacturer: EASii

Overview: XTR2N0500 High Temperature 35V P-Channel Power MOSFET Data Sheet Rev 5 – November 2023 (DS-00150-12) XTRPPPPP YYWWANN CDIP8 XTR2N0525 XTRPPPPP YYWWANN CDFP8 XTR2N0525.

Datasheet Details

Part number XTR2N0500
Manufacturer EASii
File Size 630.51 KB
Description High Temperature 35V P-Channel Power MOSFET
Datasheet XTR2N0500-EASii.pdf

General Description

XTR2N0500 is a family of 35V P-channel power MOSFETs designed to reliably operate over a wide range of temperatures.

Full functionality is guaranteed from -60°C to +230°C, though operation well below and above this temperature range is achieved.

Fabricated in a Silicon-on-Insulator (SOI) process, XTR2N0500 family parts offer reduced leakage currents while providing high drain currents and low RDS(on).

Key Features

  • Minimum BVDSS =-40V.
  • Allowed VGS range.
  • 5.5V to +5.5V.
  • Operational beyond the -60°C to +230°C temperature range.
  • Low RDS(on) o XTR2N0525: 2.3 Ω @ 230°C o XTR2N0550: 1.1 Ω @ 230°C.
  • Maximum Peak ID: o XTR2N0525: 5.3 A @ 230°C o XTR2N0550: 11.7 A @ 230°C.
  • On-time (td(on)+tr): o XTR2N0525: 26 nsec @ 230°C o XTR2N0550: 31 nsec @ 230°C.
  • Off-time (td(off)+tf): o XTR2N0525: 76 nsec @ 230°C o XTR2N0550: 91 nsec @ 230°C.
  • R.

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XTR2N0500 Distributor