1N6263
1N6263 is SCHOTTKY BARRIER DIODES manufactured by EIC Semiconductor.
FEATURES
:
- For general purpose applications
- Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications.
- This diode is also available in the Mini MELF case with type designation LL5711 and LL6263.
- Pb / Ro HS Free
MECHANICAL DATA :
Case: DO-35 Glass Case Weight: approx. 0.13g
SCHOTTKY BARRIER DIODES
- 35 Glass (DO-204AH)
0.079(2.0 )max.
Cathode Mark
0.020 (0.52)max.
1.00 (25.4) min.
0.150 (3.8) max.
1.00 (25.4) min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.
Parameter
Repetitive Peak Reverse Voltage
Power Dissipation (Infinite Heatsink) Maximum Single Cycle Surge 10 µs Square Wave Thermal Resistance Junction to...
