1N6263 Datasheet | JINAN JINGHENG ELECTRONICS

FEATURES For general purpose applications Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications These diodes are also available in the Min MELF case with type designation LL5711 and LL6263. High temperature soldering guaranteed:260℃/10 seconds at terminals ponent in accordance to Ro HS 2002/95/EC and WEEE 2002/96/EC MECHANICAL DATA Case: DO-35 glass case Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram ABSOLUTE RATINGS(LIMITING VALUES) 1N5711, 1N6263 SMALL SIGNAL SCHOTTKY DIODES DO-35 0.079(2.0) MAX DIA 1.083(27.5) MIN 0.150(3.8) MAX 0.020(0.52) MAX DIA 1.083(27.5) MIN Dimensions in inches and (millimeters) Symbols Peak Reverse Voltage 1N5711 1N6263 VRRM VRRM Power Dissipation (infinite Heat Sink) Forward...