1N6263 Datasheet
1N6263 Datasheet (Digitron Semiconductors)
Digitron Semiconductors
1N5711, 1N5712 & 1N6263 High-reliability discrete products and engineering services since 1977 SCHOTTKY RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX .
* Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
* Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS Parameter
Peak Inverse Voltage
1N5711 1N6263
Power Dissipation (Infinite He.
1N6263 Datasheet (General Semiconductor)
General Semiconductor
1N5711 and 1N6263 Schottky Diodes DO-204AH (DO-35 Glass) Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The lo.
* For general purpose applications
* Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level appl.
1N6263 Datasheet (JINAN JINGHENG ELECTRONICS)
JINAN JINGHENG ELECTRONICS
R SEMICONDUCTOR FEATURES For general purpose applications Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switch.
For general purpose applications Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level.
1N6263 Datasheet (EIC Semiconductor)
EIC Semiconductor
1N5711 and 1N6263 VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop.
:
* For general purpose applications
* Metal-on-silicon Schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level ap.