Datasheet4U Logo Datasheet4U.com

1S2076A - HIGH SPEED SWITCHING DIODE

Features

  • :.
  • Silicon Epitaxial Planar Diode.
  • High reliability.
  • Low reverse current.
  • Low forward voltage drop.
  • High speed switching.
  • Pb / RoHS Free.

📥 Download Datasheet

Datasheet preview – 1S2076A

Datasheet Details

Part number 1S2076A
Manufacturer EIC
File Size 27.09 KB
Description HIGH SPEED SWITCHING DIODE
Datasheet download datasheet 1S2076A Datasheet
Additional preview pages of the 1S2076A datasheet.

📁 Similar Datasheet

  • 1S2076A - Silicon Epitaxial Planar Diode (Renesas)
  • 1S2076A - Silicon Epitaxial Planar Diode (Hitachi Semiconductor)
  • 1S2076 - Silicon Diode (Hitachi Semiconductor)
  • 1S2076 - Silicon Epitaxial Planar Diode (Renesas)
  • 1S2076 - SILICON EPITAXIAL PLANAR DIODE (Sunmate)
  • 1S2074 - Silicon Epitaxial Planar Diode (Hitachi Semiconductor)
  • 1S2074H - Silicon Diode (Hitachi Semiconductor)
  • 1S2075 - Silicon Diode (Hitachi Semiconductor)
  • 1S2075 - SILICON EPITAXIAL PLANAR DIODE (Sunmate)
  • 1S2075 - Silicon Epitaxial Planar Diode (Renesas)
Other Datasheets by EIC
  • 1S20 - SCHOTTKY BARRIER RECTIFIER DIODES

Full PDF Text Transcription

Click to expand full text
1S2076A PRV : 70 Volts Io : 150 mA FEATURES : * Silicon Epitaxial Planar Diode * High reliability * Low reverse current * Low forward voltage drop * High speed switching * Pb / RoHS Free MECHANICAL DATA : * Case : DO-35 Glass Case * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.13 gram (approximately) HIGH SPEED SWITCHING DIODE DO - 35 0.079(2.0 )max. 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Published: |