1S2076A
1S2076A is HIGH SPEED SWITCHING DIODE manufactured by EIC Semiconductor.
FEATURES
:
- Silicon Epitaxial Planar Diode
- High reliability
- Low reverse current
- Low forward voltage drop
- High speed switching
- Pb / Ro HS Free
MECHANICAL DATA :
- Case : DO-35 Glass Case
- Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
- Polarity : Color band denotes cathode end
- Mounting position : Any
- Weight : 0.13 gram (approximately)
HIGH SPEED SWITCHING DIODE DO
- 35
0.079(2.0 )max. 0.020 (0.52)max.
1.00 (25.4) min.
0.150 (3.8) max.
1.00 (25.4) min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Average Forward Current
Maximum Non-Repetitive Peak Forward Current (t < 1s)
Maximum Power Dissipation , Ta = 25 °C...
