1S2076
1S2076 is SILICON EPITAXIAL PLANAR DIODE manufactured by Sunmate.
Features
! Low capacitance. (C = 3.0p F max) ! Short reverse recovery time. (trr = 8.0ns max) ! High reliability with glass seal.
Mechanical Data
! Case: DO-35, glass case ! Polarity: Color band denotes cathode ! Weight: 0.004 ounces, 0.13 grams
DO-35(GLASS)
0.079(2.0) MAX
1.0 2(26.0) MIN.
0.165 (4.2) MAX
0.020(0.52) TYP
1.0 2(26.0) MIN.
Dimensions in millimeters
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current.
Symbol VRM VR I FM I FSM
- IO Pd Tj Tstg
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol Min Typ
Forward voltage Reverse current Capacitance
- IR
- -
- -
Reverse recovery time trr-
- -
Note: Reverse recovery time test circuit
Max 0.80 0.1 3.0 8.0
Value 35 30 450 1 150 250 175
- 65 to +175
Unit V V m A A m A m W °C °C
Unit V µA p F ns
Test Condition IF = 10m A VR = 30V VR = 1V, f = 1MHz IF = IR = 10m A, Irr = 1m A
1 of 2
.sunmate.tw
Forward current I F (A)
10- 1
125°C 75°C 25°C
- 25°C
= = =...