• Part: 1S2076
  • Description: SILICON EPITAXIAL PLANAR DIODE
  • Category: Diode
  • Manufacturer: Sunmate
  • Size: 440.34 KB
Download 1S2076 Datasheet PDF
Sunmate
1S2076
1S2076 is SILICON EPITAXIAL PLANAR DIODE manufactured by Sunmate.
Features ! Low capacitance. (C = 3.0p F max) ! Short reverse recovery time. (trr = 8.0ns max) ! High reliability with glass seal. Mechanical Data ! Case: DO-35, glass case ! Polarity: Color band denotes cathode ! Weight: 0.004 ounces, 0.13 grams DO-35(GLASS) 0.079(2.0) MAX 1.0 2(26.0) MIN. 0.165 (4.2) MAX 0.020(0.52) TYP 1.0 2(26.0) MIN. Dimensions in millimeters Absolute Maximum Ratings (Ta = 25°C) Characteristic Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR I FM I FSM - IO Pd Tj Tstg Electrical Characteristics (Ta = 25°C) Characteristic Symbol Min Typ Forward voltage Reverse current Capacitance - IR - - - - Reverse recovery time trr- - - Note: Reverse recovery time test circuit Max 0.80 0.1 3.0 8.0 Value 35 30 450 1 150 250 175 - 65 to +175 Unit V V m A A m A m W °C °C Unit V µA p F ns Test Condition IF = 10m A VR = 30V VR = 1V, f = 1MHz IF = IR = 10m A, Irr = 1m A 1 of 2 .sunmate.tw Forward current I F (A) 10- 1 125°C 75°C 25°C - 25°C = = =...