1S2076
1S2076 is Silicon Diode manufactured by Hitachi Semiconductor.
Features
- Low capacitance. (C = 3.0p F max)
- Short reverse recovery time. (trr = 8.0ns max)
- High reliability with glass seal.
Ordering Information
Type No. 1S2076 Cathode band Light Blue Package Code DO-35
Outline
1 Cathode band
1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR I FM I FSM
- IO Pd Tj Tstg Value 35 30 450 1 150 250 175
- 65 to +175 Unit V V m A A m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C t rr- Min 0.64
- -
- Typ
- -
- - Max 0.80 0.1 3.0 8.0 Unit V µA p F ns Test Condition I F = 10m A VR = 30V VR = 1V, f = 1MHz I F = IR = 10m A, Irr = 1m A
Note: Reverse recovery time test circuit
DC Supply
0.1µF
3kΩ Sampling Rin = 50Ω Oscilloscope
Ro = 50Ω Pulse Generator
Trigger
- 1
Forward current I F (A)
- 3
- 4
0.8 0.4 0.6 1.0 Forward voltage VF (V)
Ta = 125 °C Ta = 75°C Ta = 25°C Ta =
- 25° C
-...
