• Part: 1SS130
  • Description: HIGH SPEED SWITCHING DIODE
  • Category: Diode
  • Manufacturer: EIC Semiconductor
  • Size: 59.44 KB
Download 1SS130 Datasheet PDF
EIC Semiconductor
1SS130
1SS130 is HIGH SPEED SWITCHING DIODE manufactured by EIC Semiconductor.
FEATURES : - High switching speed: max. 4 ns - Continuous reverse voltage:max. 75 V - Repetitive peak reverse voltage:max. 100 V - Pb / Ro HS Free HIGH SPEED SWITCHING DIODE - 34 Glass 0.078 (2.0 )max. 1.00 (25.4) min. Cathode Mark 0.118 (3.0) max. 0.019 (0.50)max. MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.093g 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Current Maximum Power Dissipation Maximum Non-repetitive Peak Forward Current Maximum Junction Temperature Storage Temperature Range 25 °C ambient temperature unless otherwise specified.) Symbol VRRM VRM IF IFM PD IFSM TJ TS Value 100 75 130 400 300 600 175 -65 to + 175 Unit V V m A m A m W m A °C °C Electrical Characteristics (Ta = 25°C unless otherwise noted) Parameter Reverse Current Forward Voltage Capacitance between terminals Reverse Recovery Time Symbol IR VF CT Trr Test Condition VR = 20 V IF = 10 m A f = 1MHz ; VR = 0 V IF = 10 m A , VR = 6 V RL = 50 Ω Min. - Typ. - Max. 0.5 1.0 4.0 4.0 Unit µA V p F ns Page 1 of...