EIC Semiconductor 1SS132
HIGH SPEED SWITCHING DIODE
| Part No. | 1SS132 |
|---|---|
| Datasheet | 1SS132 Download |
| Manufacturer |  EIC Semiconductor |
| Description | HIGH SPEED SWITCHING DIODE |
| Buy | Stock & Price |
FEATURES
:● High switching speed: max. 4 ns
● Continuous reverse voltage:max. 50 V
● Repetitive peak reverse voltage:max. 55 V
● Pb / RoHS Free
MECHANICAL DATA
: Case: DO-34 Glass Case Weight: approx. 0.093g HIGH SPEED SWITCHING DIODE DO - 34 Glass 0.078 (2.0 )max. Cathode Mark 0.017 (0.43)max. 1.00 (25.4) min. 0.118 (3.0) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters )MAXIMUM RATINGS
and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Current Maximum Power Dissipation Maximum Non-repetitive Peak Forward Current Maximum Junction Temperature Storage Temperature Range Symbol VRRM VRM IF IFM PD IFSM TJ TS Value 55 50 120 350 300 500 175 -65 to + 175 Unit V V mA mA mW mA °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C unless otherwise noted) Parameter Symbol Test Condition Reverse Current Forward Voltage Capacitance between terminals Reverse Recovery Time IR VR = 50 V VF IF = 100 mA CT f = 1MHz ; VR = 0.5 V Trr IF = 10 mA , VR = 6 V RL = 50 Ω Min.