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ELM4N6032FAA-N - Single N-channel MOSFET

Features

  • ELM4N6032FAA-N uses advanced trench technology.
  • Vds=60V to provide excellent Rds(on), low gate charge and low.
  • Id=13A (Vgs=10V) gate threshold voltage.
  • Rds(on) = 8.5mΩ (Vgs=10V).
  • Rds(on) = 12.0mΩ (Vgs=4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Ta=25°C Ta=100°C Pulsed drain current Single pulse avalanche energy Avalanche current Total power dissipation Ta=25°C St.

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Datasheet Details

Part number ELM4N6032FAA-N
Manufacturer ELM
File Size 518.19 KB
Description Single N-channel MOSFET
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Single N-channel MOSFET ELM4N6032FAA-N https://www.elm-tech.com ■General description ■Features ELM4N6032FAA-N uses advanced trench technology • Vds=60V to provide excellent Rds(on), low gate charge and low • Id=13A (Vgs=10V) gate threshold voltage. • Rds(on) = 8.5mΩ (Vgs=10V) • Rds(on) = 12.0mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Ta=25°C Ta=100°C Pulsed drain current Single pulse avalanche energy Avalanche current Total power dissipation Ta=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm EAS Ias Pd Tstg Tj Limit 60 ±20 13 8 60 80 40 2.
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