ELM ELM4N6032FDA-N
The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.| Part No. | ELM4N6032FDA-N |
|---|---|
| Datasheet | ELM4N6032FDA-N Download |
| Manufacturer |  ELM |
| Description | Single N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
ELM4N6032FDA-N uses advanced trench technology● Vds=60V to provide excellent Rds(on), low gate charge and low
● Id=75A (Vgs=10V) gate threshold voltage.
● Rds(on) = 8.5mΩ (Vgs=10V)
● Rds(on) = 12.0mΩ (Vgs=4.5V)
●Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Tc=25°C Continuous drain current (Vgs=10V) Tc=100°C Pulsed drain current Single pulsed avalanche energy Avalanche current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit 60 ±20 75 47 280 80 40 41 -55 to 150 -55 to 150 Unit Note V V A 1 A 2 mJ 3 A W 4 °C °C
●Thermal characteristics Parameter Thermal resistance junction-ambient Thermal resistance junction-case Symbol Typ. Rθja - Rθjc - Max. 62.0 1.4 Unit Note °C/W 1
●Pin configuration TO-252 (TOP VIEW) (BOTTOM VIEW) 2 1 2 3 Pin No. 1 2 3 Pin name GATE DRAIN SOURCE
●Circuit D G S Rev.1.1 1/5 Single N-channel MOSFET
●Electrical characteristics ELM4N6032FD...
