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ELM53415EAA-S - Single P-channel MOSFET

Key Features

  • ELM53415EAA-S uses advanced trench technology to.
  • Vds=-20V provide excellent Rds(on), low gate charge and low gate.
  • Id=-4.5A threshold voltage.
  • Rds(on) = 41mΩ (Vgs=-4.5V).
  • Rds(on) = 54mΩ (Vgs=-2.5V).
  • Rds(on) = 70mΩ (Vgs=-1.8V).
  • ESD protected.
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Tj=150°C) Pulsed drain current Power dissipation Junction and storage temperature ran.

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Datasheet Details

Part number ELM53415EAA-S
Manufacturer ELM
File Size 854.52 KB
Description Single P-channel MOSFET
Datasheet download datasheet ELM53415EAA-S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Single P-channel MOSFET ELM53415EAA-S http://www.elm-tech.com ■General description ■Features ELM53415EAA-S uses advanced trench technology to • Vds=-20V provide excellent Rds(on), low gate charge and low gate • Id=-4.5A threshold voltage. • Rds(on) = 41mΩ (Vgs=-4.5V) • Rds(on) = 54mΩ (Vgs=-2.5V) • Rds(on) = 70mΩ (Vgs=-1.8V) • ESD protected ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Tj=150°C) Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit -20 V ±12 V -4.5 A -3.9 -10 A 1.25 W 0.