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ELM54614CWSA-N - Complementary MOSFET

Description

ELM54614CWSA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge.

Features

  • N-channel.
  • Vds=40V.
  • Id=10.0A.
  • Rds(on)=35mΩ(Vgs=10V).
  • Rds(on)=45mΩ(Vgs=4.5V) http://www. elm-tech. com P-channel.
  • Vds=-40V.
  • Id=-10.0A.
  • Rds(on)=35mΩ(Vgs=-10V).
  • Rds(on)=45mΩ(Vgs=-4.5V).
  • Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Avalanche current Avalanche energy Power dissipation Operating junction temperature Storage temperature rang.

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Datasheet Details

Part number ELM54614CWSA-N
Manufacturer ELM
File Size 1.15 MB
Description Complementary MOSFET
Datasheet download datasheet ELM54614CWSA-N Datasheet

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Full PDF Text Transcription

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Complementary MOSFET ■General Description ELM54614CWSA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. ELM54614CWSA-N ■Features N-channel • Vds=40V • Id=10.0A • Rds(on)=35mΩ(Vgs=10V) • Rds(on)=45mΩ(Vgs=4.5V) http://www.elm-tech.com P-channel • Vds=-40V • Id=-10.0A • Rds(on)=35mΩ(Vgs=-10V) • Rds(on)=45mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Avalanche current Avalanche energy Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C L=0.1mH Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Ias Eas Pd Tj Tstg Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit 40 -40 V ±20 ±20 V 10.0 -10.0 A 6.0 -6.
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