ELM54616CWSA-N Datasheet PDF (Complementary MOSFET)

ELM54616CWSA-N - Complementary MOSFET

Description

ELM54616CWSA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge.

Features

N-channel.
Vds=30V.
Id=8.0A.
Rds(on)=18mΩ(Vgs=10V).
Rds(on)=22mΩ(Vgs=4.5V) http://www. elm-tech. com P-channel.
Vds=-30V.
Id=-8.0A.
Rds(on)=18mΩ(Vgs=-10V).
Rds(on)=22mΩ(Vgs=-4.5V).
Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C S.

Datasheet Details

Part number	ELM54616CWSA-N
Manufacturer	ELM
File Size	1.30 MB
Description	Complementary MOSFET
Datasheet	ELM54616CWSA-N Datasheet
Additional preview pages of the ELM54616CWSA-N datasheet.

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Full PDF Text Transcription

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Complementary MOSFET ■General Description ELM54616CWSA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. ELM54616CWSA-N ■Features N-channel • Vds=30V • Id=8.0A • Rds(on)=18mΩ(Vgs=10V) • Rds(on)=22mΩ(Vgs=4.5V) http://www.elm-tech.com P-channel • Vds=-30V • Id=-8.0A • Rds(on)=18mΩ(Vgs=-10V) • Rds(on)=22mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit 30 -30 V ±20 ±20 V 8.0 -8.0 A 6.0 -6.0 25 -30 A 2.8 2.8 W 1.8 1.

Published: Nov 10, 2025 |