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ELM55614CA-S - Complementary MOSFET

General Description

ELM55614CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Key Features

  • N-channel.
  • Vds=40V.
  • Id=12.0A.
  • Rds(on) = 35mΩ(Vgs=10V).
  • Rds(on) = 42mΩ(Vgs=4.5V) http://www. elm-tech. com P-channel.
  • Vds=-40V.
  • Id=-12.0A.
  • Rds(on) = 65mΩ(Vgs=-10V).
  • Rds(on) = 95mΩ(Vgs=-4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C.

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Datasheet Details

Part number ELM55614CA-S
Manufacturer ELM
File Size 1.25 MB
Description Complementary MOSFET
Datasheet download datasheet ELM55614CA-S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Complementary MOSFET (common drain) ■General description ELM55614CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. ELM55614CA-S ■Features N-channel • Vds=40V • Id=12.0A • Rds(on) = 35mΩ(Vgs=10V) • Rds(on) = 42mΩ(Vgs=4.5V) http://www.elm-tech.com P-channel • Vds=-40V • Id=-12.0A • Rds(on) = 65mΩ(Vgs=-10V) • Rds(on) = 95mΩ(Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit 40 -40 V ±20 ±20 V 12.0 -12.0 A 10.0 -10.